Influence of sputtering conditions on the properties of aluminum-doped zinc oxide thin film fabricated using a facing target sputtering system
- Authors
- Lee M.; Park Y.; Kim K.; Hong J.
- Issue Date
- Jun-2020
- Publisher
- Elsevier B.V.
- Keywords
- Aluminum-doped zinc oxide; Facing target sputtering system; Thin film; Transparent conductivity oxide
- Citation
- Thin Solid Films, v.703
- Journal Title
- Thin Solid Films
- Volume
- 703
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/60208
- DOI
- 10.1016/j.tsf.2020.137980
- ISSN
- 0040-6090
- Abstract
- In this study, aluminum-doped zinc oxide thin films are deposited on a glass substrate using a facing target sputtering system, as a function of film thickness and input power, to study their crystallographic, optical, and electrical properties at various sputtering conditions. X-ray crystallography results revealed a (002) peak at approximately 34° with the highest intensity. The 200 nm film deposited at 100 W exhibited high crystallinity, the highest transmittance (92%), and lowest resistivity (1.4 × 10−3 Ω cm). © 2020 Elsevier B.V.
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Collections - IT융합대학 > 전기공학과 > 1. Journal Articles
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