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Uniformity improvement of SiNjc-based resistive switching memory by suppressed internal overshoot current
- Authors
- Kim, M.-H.; Kim, S.; Bang, S.; Kim, T.-H.; Lee, D.K.; Cho, S.; Lee, J.-H.; Park, B.-G.
- Issue Date
- 2017
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- 2017 Silicon Nanoelectronics Workshop, SNW 2017, v.2017-January, pp.19 - 20
- Journal Title
- 2017 Silicon Nanoelectronics Workshop, SNW 2017
- Volume
- 2017-January
- Start Page
- 19
- End Page
- 20
- ISSN
- 0000-0000
- Abstract
- In this work, we have investigated the effect of thin SiO2 layer on switching variability of SiNx-based RRAM. We found that recessive LRS state generated in set operation results in large reset current and abrupt reset operation. The abrupt reset operation leads to large HRS distribution. To investigate the transient characteristics of switching process in detail, measurement environment is implemented with equivalent circuit and measured current from equipment is separated to capacitive and resistive current element. Consequently, we point the internal overshoot current occurred in set operation as the cause of switching variability and large distribution. © 2017 JSAP.
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)