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Results 1-10 of 11 (Search time: 0.002 seconds).
Thyristor technology for ultra-sharp-switching logic and capacitorless dynamic random-access memory (DRAM) applications
조성재
Conference
Issue Date
2016
Place
대한민국; 강원도 하이원리조트
DC and pulse switching characteristics of fully Si processing-compatible SiN-based RRAM
조성재
Conference
Issue Date
2016
Place
대한민국; 강원도 하이원리조트
Nanowire PMOSFET having Si core and ultra-thin Ge peripheral channel
조성재
Conference
Issue Date
2016
Place
대한민국; 강원도 하이원리조트
First-principle study of GeSn alloys for electrical and optical characterizations
조성재
Conference
Issue Date
2016
Place
대한민국; 강원도 하이원리조트
Optimal design of 10-nm junctionless field-effect transistor with poly-Si channel in consideration of quantum-mechanical drift-diffusion models
조성재
Conference
Issue Date
2016
Place
대한민국; 강원도 하이원리조트
Ge-on-Si microdisk resonator with enhanced optical confinement by SiNx stressor for Si electronic and photonic integrated system
조성재
Conference
Issue Date
2016
Place
대한민국; 강원도 하이원리조트
Circuit-level simulation of RRAM cross-point array based on a reliable device-level compact modeling
조성재
Conference
Issue Date
2016
Place
대한민국; 강원도 하이원리조트
Highly accurate circuit-level macro modeling of charge-trap flash memory
조성재
Conference
Issue Date
2016
Place
대한민국; 강원도 하이원리조트
Si CMOS extension and Ge technology perspectives forecase through metal-oxide-semiconductor junctionless field-effect transistor
조성재
Conference
Issue Date
2016
Place
대한민국; 강원도 하이원리조트
Characterization of GeSn deposited on Si by low-temperature sputter epitaxy
조성재
Conference
Issue Date
2016
Place
대한민국; 강원도 하이원리조트
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Cho, Seong Jae
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2016
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