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2. Conference Papers
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Dependence of Device Performances on Fin Dimensions in AlGaN/GaN Recessed-Gate Nanoscale FinFET
조성재
Conference
Issue Date
2014
Place
미국; Jeju, Republic of Korea
O2-Enhanced Surface Treatment of Ge Epitaxially Grown on Si for Heterogeneous Ge Technology
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Conference
Issue Date
2014
Place
미국; Jeju, Republic of Korea
Analyses on ZnO/CdS Heterojunction for Design of CIGS Photovoltaic Device with Higher Accuracy
조성재
Conference
Issue Date
2014
Place
미국; Jeju, Republic of Korea
1
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Cho, Seong Jae
3
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2014
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