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Results 1-5 of 5 (Search time: 0.002 seconds).
Bias Polarity Dependent Resistive Switching Behavior in Silicon-Nitride Based Memory Cells
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Conference
Issue Date
2015
Place
일본; 대한민국 제주
Sub-10 nm Ge/GaAs Heterojunction-based Tunneling Field-Effect Transistor with Vertical Tunneling Operation
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Conference
Issue Date
2015
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일본; 대한민국 제주
Characterization of Ge thin film deposited directly on Si by low-thermal-budget processing
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Conference
Issue Date
2015
Place
일본; 대한민국 제주
Effects of Bottom Electrode on Ag-Based Electrochemical Metallization Memory Devices
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Conference
Issue Date
2015
Place
일본; 대한민국 제주
A junctionless field-effect transistor with an ultra-thin poly-Si channel for sub-10-nm technology node
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Conference
Issue Date
2015
Place
일본; 대한민국 제주
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Cho, Seong Jae
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2015
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