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Effect of IZO passivation layer on AgNWs flexible transparent electrode

Authors
Han, Gi JaeYou, SslimsearomChoi, Hyung WookKim, Kyung Hwan
Issue Date
2017
Publisher
TAYLOR & FRANCIS LTD
Keywords
Silver nanowire; IZO; facing targets sputtering system; transparent electrode
Citation
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.645, no.1, pp.255 - 260
Journal Title
MOLECULAR CRYSTALS AND LIQUID CRYSTALS
Volume
645
Number
1
Start Page
255
End Page
260
URI
https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/7457
DOI
10.1080/15421406.2016.1277662
ISSN
1542-1406
Abstract
In this paper, we report the fabrication of flexible transparent electrodes using silver nanowires (AgNWs) as the main material, and an indium zinc oxide (IZO) thin film as a passivation layer to protect the AgNWs. The AgNWs were deposited on glass and polyethersulfone (PES) substrates by a spin coating method, and IZO films were deposited on the AgNWs by a facing targets sputtering (FTS) method. The FTS system used in this study is made up of two targets that face each other. This can minimize the substrate damage from the high-energy sputtered particles and plasma particles, improving the device characteristics. In order to check the effectiveness of IZO as a passivation layer, we performed an adhesion test and an oxidation test. The results confirmed that the IZO thin film enhances the adhesiveness of the substrate with AgNWs and prevents the oxidation of the substrate by atmospheric oxygen. The IZO/AgNWs structures deposited on the PES substrates showed excellent properties in extreme bending tests, which determine the flexibility for small or thin device fabrication. Measurements of the electrical and optical properties of the samples confirmed a sheet resistance of 10 /sq. and a transparency of 93%, at 1 time of AgNWs coating. Thus, IZO thin films were fabricated by the FTS method as a passivation layer that protects the AgNWs to form IZO/AgNWs structures that can be used as flexible transparent electrodes.
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College of IT Convergence (Department of Electrical Engineering)
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