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Dopant concentration dependent resistive switching characteristics in Cu/SiNx/Si structure
- Issue Date
- 25-Nov-2016
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Resistive random-access memory (RRAM); Silicon nitride (Si3N4); Dopant concentration; Switching mechanism
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.686, pp.479 - 483
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 686
- Start Page
- 479
- End Page
- 483
- ISSN
- 0925-8388
- Abstract
- In this paper, dopant concentration dependent resistive switching characteristics in a SiNx-based resistive random-access memory (RRAM) device are investigated. The device with low dopant concentration (similar to 10(18) cm(-3)) shows only unipolar switching due to the suppressed reverse current. The result of conduction mechanism analyses for LRS indicates that conducting transport follows the thermionic emission, which has a strong temperature dependence. On the other hand, both unipolar and bipolar switching are observed in the device with high dopant concentration (similar to 10(20) cm(-3)). It is found that forward current/reverse current (F/R) ratio can be maximized by reducing doping concentration and compliance current (I-CC). (C) 2016 Elsevier B.V. All rights reserved.
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)