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A Quantum-Well Charge-Trap Synaptic Transistor with Highly Linear Weight Tunability

Authors
Yu, E.Cho, S.Roy, K.Park, B.
Issue Date
Jul-2020
Publisher
Institute of Electrical and Electronics Engineers Inc.
Keywords
energy efficiency; hardware-driven neuromorphic system.; linear weight tunability; Logic gates; long-term plasticity (LTP); Mathematical model; Neuromorphics; quantum-well charge-trap synaptic transistor; short-term plasticity (STP); Si-processing compatibility; Silicon; Silicon germanium; Transistors; Tunneling
Citation
IEEE Journal of the Electron Devices Society, v.8, pp.836 - 840
Journal Title
IEEE Journal of the Electron Devices Society
Volume
8
Start Page
836
End Page
840
URI
https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78074
DOI
10.1109/JEDS.2020.3011409
ISSN
2168-6734
Abstract
In this work, a novel synaptic transistor has been proposed and analyzed through technology computer-aided design (TCAD) simulation. The proposed device has merits of full-Si processing compatibility, short-and long-term plasticity, high energy efficiency, and linear and symmetric conductance adjustability. The proposed device consists of a quantum-well structure and a charge-trap unit for realizing both short-and long-term memories, respectively. The quantum-well charge-trap synaptic transistor (QW CTS) employs two independent gates to separate inference and weight adjustment operation. An optimally designed and validated QW CTS has demonstrated a highly linear and symmetric weight tunability, with an ultra-low energy consumption of 1.5 fJ per synaptic event. The QW CTS can be a core element in the hardware-driven Si neuromorphic system. CCBY
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