Gate-tunable gas sensing behaviors in air-stable ambipolar organic thin-film transistors
DC Field | Value | Language |
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dc.contributor.author | Kwon, Hyunah | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.contributor.author | Nakano, Masahiro | - |
dc.contributor.author | Takimiya, Kazuo | - |
dc.contributor.author | Kim, Jae-Joon | - |
dc.contributor.author | Kim, Jong Kyu | - |
dc.date.available | 2020-10-20T06:42:57Z | - |
dc.date.created | 2020-06-10 | - |
dc.date.issued | 2020-01 | - |
dc.identifier.issn | 2046-2069 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78512 | - |
dc.description.abstract | Chemiresistive gas sensors, which exploit their electrical resistance in response to changes in nearby gas environments, usually achieve selective gas detection using multi-element sensor arrays. As large numbers of sensors are required, they often suffer from complex and high-cost fabrication. Here, we demonstrate an ambipolar organic thin-film transistor as a potential multi-gas sensing device utilizing gate-tunable gas sensing behaviors. Combining behaviors of both electron and hole carriers in a single device, the proposed device showed dynamic changes depending on gate biases and properties of target gases. As a result, the gas response as a function of gate biases exhibits a unique pattern towards a specific gas as well as its concentrations, which is very different from conventional unipolar organic thin-film transistors. In addition, our device showed an excellent air-stable characteristic compared to typical ambipolar transistors, providing great potential for practical use in the future. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.relation.isPartOf | RSC ADVANCES | - |
dc.title | Gate-tunable gas sensing behaviors in air-stable ambipolar organic thin-film transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000507394900009 | - |
dc.identifier.doi | 10.1039/c9ra09195e | - |
dc.identifier.bibliographicCitation | RSC ADVANCES, v.10, no.4, pp.1910 - 1916 | - |
dc.description.isOpenAccess | N | - |
dc.citation.endPage | 1916 | - |
dc.citation.startPage | 1910 | - |
dc.citation.title | RSC ADVANCES | - |
dc.citation.volume | 10 | - |
dc.citation.number | 4 | - |
dc.contributor.affiliatedAuthor | Yoo, Hocheon | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SELECTIVE DETECTION | - |
dc.subject.keywordPlus | SENSORS | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | COPOLYMER | - |
dc.subject.keywordPlus | LIGHT | - |
dc.subject.keywordPlus | ARRAY | - |
dc.subject.keywordPlus | NO2 | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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