Gate-tunable gas sensing behaviors in air-stable ambipolar organic thin-film transistors
- Authors
- Kwon, Hyunah; Yoo, Hocheon; Nakano, Masahiro; Takimiya, Kazuo; Kim, Jae-Joon; Kim, Jong Kyu
- Issue Date
- Jan-2020
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- RSC ADVANCES, v.10, no.4, pp.1910 - 1916
- Journal Title
- RSC ADVANCES
- Volume
- 10
- Number
- 4
- Start Page
- 1910
- End Page
- 1916
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78512
- DOI
- 10.1039/c9ra09195e
- ISSN
- 2046-2069
- Abstract
- Chemiresistive gas sensors, which exploit their electrical resistance in response to changes in nearby gas environments, usually achieve selective gas detection using multi-element sensor arrays. As large numbers of sensors are required, they often suffer from complex and high-cost fabrication. Here, we demonstrate an ambipolar organic thin-film transistor as a potential multi-gas sensing device utilizing gate-tunable gas sensing behaviors. Combining behaviors of both electron and hole carriers in a single device, the proposed device showed dynamic changes depending on gate biases and properties of target gases. As a result, the gas response as a function of gate biases exhibits a unique pattern towards a specific gas as well as its concentrations, which is very different from conventional unipolar organic thin-film transistors. In addition, our device showed an excellent air-stable characteristic compared to typical ambipolar transistors, providing great potential for practical use in the future.
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