Design Optimization of InAs-Based Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (TFET)
- Authors
- Seo, Jae Hwa; Yoon, Young Jun; Jo, Young-Woo; Son, Dong-Hyeok; Cho, Seongjae; Kwon, Hyuck-In; Lee, Jung-Hee; Kang, In Man
- Issue Date
- Oct-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- III-V Compound Semiconductor; InAs; GAA; Arch Shape; TFET; TCAD
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.10, pp.10199 - 10203
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 10
- Start Page
- 10199
- End Page
- 10203
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/7856
- DOI
- 10.1166/jnn.2016.13127
- ISSN
- 1533-4880
- Abstract
- In this work, an InAs-based gate-all-around (GAA) arch-shaped tunneling field-effect transistor (TFET) was designed and analyzed using technology computer-aided design (TCAD) simulations. To progress the DC/RF characteristics of GAA arch-shaped TFET, InAs, a highly attractive III-V compound material, is adopted as a channel material. Owing to the GAA arch-shaped structure of TFET, the tunneling region under the gate area is extended, and the on-state current (I-on) and subthreshold-swing (S) are improved. However, it has some performance limitations that are related to the height of the source region (H-source) and the epitaxially grown thickness of the channel (t(epi)). Thus, we performed a design optimization of the InAs-based GAA arch-shaped TFET with the variables H-source and t(epi). After the optimization process, RF characteristics such as gate capacitance, transconductance (g(m)), cutoff frequency (f(T)), and maximum oscillation frequency (f(max)) were extracted and analyzed by small-signal RF modeling. Finally, the designed InAs-based GAA arch-shaped TFET demonstrated an I-on of 10.6 mA/mu m, S of 6.5 mV/dec, f(T) of 2.3 THz, and f(max) of 20 THz.
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