Highly stacked 3D organic integrated circuits with via-hole-less multilevel metal interconnects
DC Field | Value | Language |
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dc.contributor.author | Yoo, Hocheon | - |
dc.contributor.author | Park, Hongkeun | - |
dc.contributor.author | Yoo, Seunghyun | - |
dc.contributor.author | On, Sungmin | - |
dc.contributor.author | Seong, Hyejeong | - |
dc.contributor.author | Im, Sung Gap | - |
dc.contributor.author | Kim, Jae-Joon | - |
dc.date.available | 2020-10-20T06:44:07Z | - |
dc.date.created | 2020-06-10 | - |
dc.date.issued | 2019-06 | - |
dc.identifier.issn | 2041-1723 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78565 | - |
dc.description.abstract | Multilevel metal interconnects are crucial for the development of large-scale organic integrated circuits. In particular, three-dimensional integrated circuits require a large number of vertical interconnects between layers. Here, we present a novel multilevel metal interconnect scheme that involves solvent-free patterning of insulator layers to form an interconnecting area that ensures a reliable electrical connection between two metals in different layers. Using a highly reliable interconnect method, the highest stacked organic transistors to date, a three-dimensional organic integrated circuits consisting of 5 transistors and 20 metal layers, is successfully fabricated in a solvent-free manner. All transistors exhibit outstanding device characteristics, including a high on/off current ratio of similar to 10(7), no hysteresis behavior, and excellent device-to-device uniformity. We also demonstrate two vertically-stacked complementary inverter circuits that use transistors on 4 different floors. All circuits show superb inverter characteristics with a 100% output voltage swing and gain up to 35 V per V. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.relation.isPartOf | NATURE COMMUNICATIONS | - |
dc.title | Highly stacked 3D organic integrated circuits with via-hole-less multilevel metal interconnects | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000469909800008 | - |
dc.identifier.doi | 10.1038/s41467-019-10412-9 | - |
dc.identifier.bibliographicCitation | NATURE COMMUNICATIONS, v.10 | - |
dc.description.isOpenAccess | N | - |
dc.citation.title | NATURE COMMUNICATIONS | - |
dc.citation.volume | 10 | - |
dc.contributor.affiliatedAuthor | Yoo, Hocheon | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | COMPLEMENTARY INVERTERS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | DNTT | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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