Multi-Stage Organic Logic Circuits Using Via-Hole-Less Metal Interconnects
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, H. | - |
dc.contributor.author | Yoo, H. | - |
dc.contributor.author | Lee, C. | - |
dc.contributor.author | Kim, J.-J. | - |
dc.contributor.author | Im, S.G. | - |
dc.date.available | 2020-11-30T00:41:23Z | - |
dc.date.created | 2020-11-09 | - |
dc.date.issued | 2020-11 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/79110 | - |
dc.description.abstract | Multi-metal interconnection is a crucial technology for the development of large-scale integrated circuits (ICs). However, organic semiconductors are not robust enough to be compatible with conventional lithography-and-etching-based via-forming methods. Thus, an alternative metal interconnect method is required for successful organic IC implementation. In-situ patterning of a dielectric polymer through a shadow mask while depositing in vapor phase possibly addresses the issues in both solvent susceptibility and process complexity. Here we report multi-stage organic logic circuits with a multi-level metal interconnection scheme based on patterned interlayer dielectrics via vapor phase deposition. We implement an exclusive OR circuit composed of four 2-input NAND gates and three-level metal interconnections to demonstrate the potential of the proposed solvent-free metal interconnection scheme. © 1980-2012 IEEE. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.relation.isPartOf | IEEE Electron Device Letters | - |
dc.title | Multi-Stage Organic Logic Circuits Using Via-Hole-Less Metal Interconnects | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000584248800018 | - |
dc.identifier.doi | 10.1109/LED.2020.3027423 | - |
dc.identifier.bibliographicCitation | IEEE Electron Device Letters, v.41, no.11, pp.1685 - 1687 | - |
dc.identifier.scopusid | 2-s2.0-85094882638 | - |
dc.citation.endPage | 1687 | - |
dc.citation.startPage | 1685 | - |
dc.citation.title | IEEE Electron Device Letters | - |
dc.citation.volume | 41 | - |
dc.citation.number | 11 | - |
dc.contributor.affiliatedAuthor | Yoo, H. | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | interconnection | - |
dc.subject.keywordAuthor | Organic semiconductors | - |
dc.subject.keywordAuthor | thin-film circuits | - |
dc.subject.keywordAuthor | thin-film transistors | - |
dc.subject.keywordAuthor | vapor deposition | - |
dc.subject.keywordPlus | Dielectric materials | - |
dc.subject.keywordPlus | Etching | - |
dc.subject.keywordPlus | Indium compounds | - |
dc.subject.keywordPlus | Integrated circuit interconnects | - |
dc.subject.keywordPlus | Logic circuits | - |
dc.subject.keywordPlus | Metals | - |
dc.subject.keywordPlus | Timing circuits | - |
dc.subject.keywordPlus | Conventional lithography | - |
dc.subject.keywordPlus | Crucial technology | - |
dc.subject.keywordPlus | Dielectric polymers | - |
dc.subject.keywordPlus | Inter-layer dielectrics | - |
dc.subject.keywordPlus | Large scale integrated circuit | - |
dc.subject.keywordPlus | Metal interconnections | - |
dc.subject.keywordPlus | Metal interconnects | - |
dc.subject.keywordPlus | Vapor phase deposition | - |
dc.subject.keywordPlus | Computer circuits | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114
COPYRIGHT 2020 Gachon University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.