Improvement of Resistive Switching Characteristics of Titanium Oxide Based Nanowedge RRAM Through Nickel Silicidation
- Authors
- Lee, Dong Keun; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Choi, Yeon-Joon; Hong, Kyungho; Kim, Sungjun; Cho, Seongjae; Lee, Jong-Ho; Park, Byung-Gook
- Issue Date
- Jan-2021
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Silicon; Silicides; Nickel alloys; Switches; Nanoscale devices; Random access memory; Silicidation; Endurance; interfacial layer (IL); nanowedge resistive random access memory (RRAM); neuromorphic application; nickel silicidation; synaptic device
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.1, pp.438 - 442
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 68
- Number
- 1
- Start Page
- 438
- End Page
- 442
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/79749
- DOI
- 10.1109/TED.2020.3037267
- ISSN
- 0018-9383
- Abstract
- Low operation power and high endurance of resistive random access memory (RRAM) as a synaptic device are critical parameters for in-memory computing applications. Yet, high power consumption and reliability issue of silicon bottom electrode (BE) RRAM hinder its commercialization as a synaptic device. In this experiment, we report on the improvement of switching characteristics of silicon BE nanowedge RRAM via the Nickel (Ni) silicidation process. Existing highly doped Si-BE forms a SiO2 interfacial layer (IL) during a switching layer deposition and increases an effective thickness, leading to increased voltage drop within the RRAM device and large cycle-to-cycle variations. By siliciding the Si-BE with Ni, the issue of IL formation is removed and the resistance of metallic NiSi BE is further reduced compared to Arsenic (As+) doped Si BE. Both dc and ac analyses of the fabricated NiSi-BE nanowedge RRAM have shown the reduction of overshoot and switching current down to 55% of the original value. Transmission electron microscopy (TEM) and energy-dispersive spectroscopy (EDS) analysis convinced the formation of NiSi BE. In addition, gradual switching characteristics, uniform low resistance state (LRS), and better endurance of NiSi-BE nanowedge RRAM enable the Si compatible approach to fabricate a large-size RRAM cross-point array for utilization in hardware-implemented neuromorphic computing applications.
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