Design of a High-Hole-Mobility Ge Transistor for Si-Driven Heterogeneous Integrated Circuits
- Authors
- 조용범; 유은선; 조성재
- Issue Date
- Jul-2017
- Publisher
- 한국과학기술원 반도체설계교육센터
- Citation
- IDEC Journal of Integrated Circuits and Systems, v.3, no.3, pp.13 - 19
- Journal Title
- IDEC Journal of Integrated Circuits and Systems
- Volume
- 3
- Number
- 3
- Start Page
- 13
- End Page
- 19
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/80364
- ISSN
- 2384-2113
- Abstract
- A high-hole-mobility transistor (HHMT) with an intrinsic Ge channel is optimally designed and its DC and high-frequency performances are investigated by technology computer-aided design (TCAD) simulation. An HHMT with a Ge channel and AlGaAs barrier on the Si substrate is characterized with a particular interest in the barrier design. More specifically, barrier doping concentration, total barrier thickness, and high-doped barrier thickness are considered as the critical design variables. A permissibly optimized device demonstrates cut-off frequency (fT) of 20 GHz and maximum oscillation frequency (fmax) of 80 GHz at a channel length of 90 nm. The Ge HHMT with an AlGaAs barrier has the potential to be a component in the heterogeneously integrated monolithic circuits made of Si, group-IV alloys, and III-V compound semiconductors where electronic and optical devices can be simultaneously integrated with enhanced device performances.
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Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
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