Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors

Abstract

The change of the electrical properties of amorphous SiInZnO thin-film transistors (SIZO TFTs) depending on Si concentration have been investigated. As the Si content increased from 1 to 3 wt%, the electrical properties are systematically degraded, such as field-effect mobility from 19.86 to 11.16 cm2 V−1 s−1. This change in properties has been found to deteriorate the SIZO network when Si content is highly added. In order to analyze the change of the electrical properties of SIZO depending on Si concentration, low frequency noise method and X-ray photoelectron spectroscopy analysis are adopted to investigate trap states in energy bandgap and oxygen vacancies of SIZO system. As a result, it was found that doping with a large amount of Si destabilizes the SIZO network, resulting in degrading electrical properties. © 2021, The Korean Institute of Electrical and Electronic Material Engineers.