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Threshold-Variation-Tolerant Coupling-Gate alpha-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System
- Authors
- Kang, Dongyeon; Jang, Jun Tae; Park, Shinyoung; Ansari, M.H.R.; Bae, Jong-Ho; Choi, Sung-Jin; Kim, Dong Myong; Kim, Changwook; Cho, Seongjae; Kim, Dae Hwan
- Issue Date
- Apr-2021
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- amorphous indium-gallium-zinc-oxide; Biology; device structure design; energy efficiency; extended gate; Hardware-oriented neuromorphic computing; Ions; Layout; Logic gates; Neurons; parallel data processing; Synapses; synaptic transistor; Transistors
- Citation
- IEEE Access, v.9, pp.59345 - 59352
- Journal Title
- IEEE Access
- Volume
- 9
- Start Page
- 59345
- End Page
- 59352
- ISSN
- 2169-3536
- Abstract
- Hardware-oriented neuromorphic computing is gaining great deal of interest for highly parallel data processing and superb energy efficiency, as the candidate for replacement of conventional von Neumann computing. In this work, a novel synaptic transistor constructing the neuromorphic system is proposed, fabricated, and characterized. Amorphous indium-gallium-zinc-oxide (α-IGZO) and Al2O3 are introduced as the channel and gate dielectric materials, respectively. Along with the high functionality and low-temperature processing viability, geometric peculiarity featuring extended gate structure improves the performances of the proposed transistor as synaptic component in the neuromorphic system. The insight into the substantial effect of optimal device structure design on energy efficiency is highlighted. CCBYNCND
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)