Investigation on microstructural and opto-electrical properties of Zr-doped SnO2 thin films for Al/Zr:SnO2/p-Si Schottky barrier diode application
- Authors
- Ravikumar, K.; Agilan, S.; Raja, M.; Marnadu, R.; Alshahrani, T.; Shkir, Mohd; Balaji, M.; Ganesh, R.
- Issue Date
- Dec-2020
- Publisher
- ELSEVIER
- Keywords
- Zr-doped SnO2; Optical properties; Schottky barrier diode; Electrical properties; Barrier height
- Citation
- PHYSICA B-CONDENSED MATTER, v.599
- Journal Title
- PHYSICA B-CONDENSED MATTER
- Volume
- 599
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/81225
- DOI
- 10.1016/j.physb.2020.412452
- ISSN
- 0921-4526
- Abstract
- Herein, the fabrication of novel pure and Zr-doped SnO2 (Zr@SnO2) films via sol-gel spin coating process for Schottky barrier diode (SBD) application has been reported. Phase and size analysis were carried out through X-ray diffraction and Scherrer rule was used to determine crystallite size, which is noticed between 2 and 6 nm. The SEM study reveals that the fabricated films contain very fine sphere-like grains. The optical transmittance of Zr@SnO2 thin films reveals that the grown films possess high transmittance which is good for optoelectronics. The values of energy gap for all Zr@SnO2 films were estimated between 3.90 and 3.96 eV. The dc conductivity analysis showed that SnO2 films possess higher electrical conductivity at 8 wt% of Zr. The barrier heights (phi(B)) and ideality factor (n) of the fabricated SBDs were calculated from both J-V and Cheung's method. Better performance was noticed for Zr (8 wt%):SnO2/p-Si SBD.
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