Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications
DC Field | Value | Language |
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dc.contributor.author | Rasheed, Umbreen | - |
dc.contributor.author | Ryu, Hojeong | - |
dc.contributor.author | Mahata, Chandreswar | - |
dc.contributor.author | Khalil, Rana M. Arif | - |
dc.contributor.author | Imran, Muhammad | - |
dc.contributor.author | Rana, Anwar Manzoor | - |
dc.contributor.author | Kousar, Farhana | - |
dc.contributor.author | Kim, Boram | - |
dc.contributor.author | Kim, Yoon | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Hussain, Fayyaz | - |
dc.contributor.author | Kim, Sungjun | - |
dc.date.accessioned | 2021-07-04T03:40:30Z | - |
dc.date.available | 2021-07-04T03:40:30Z | - |
dc.date.created | 2021-05-20 | - |
dc.date.issued | 2021-10-05 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/81472 | - |
dc.description.abstract | Internet of things and big data demand the development of new techniques for memory devices going beyond conventional ways of memorizing and computing. In this work, we fabricated a Pt/a-Ta2O5/TiN resistive switching memory device and demonstrated its resistive and synaptic characteristics. Firstly, X-ray photoelectron spectroscopy (XPS) of a-Ta2O5/TiN analysis was conducted to determine elemental compositions of a-Ta2O5/TiN and TiON interfacial layer between a-Ta2O5 and TiN layer. Repetitive bipolar resistive switching was achieved by a set at a negative bias and a reset at a positive bias. Moreover, its biological potentiation and depression behaviors were well emulated by applying a repetitive pulse on the device. For deep understanding of this device's properties based on materials, oxygen vacancies, and stack engineering, theoretical calculations were performed employing Vienna ab-initio simulation Package (VASP) code. All calculations were carried out using PBE and GGA+U method to obtain accurate results. Work function difference between electrodes provided a localized path for forming a Vo based conducting filament in a-Ta2O5. Iso-surface charge density plots confirmed the formation of intrinsic Vo based conducting filaments in a-Ta2O5. These conducting filaments became stronger with increasing concentration of Vos in a-Ta2O5. Integrated charge density, density of states (DOS), and potential line ups also confirmed that Vo was responsible for charge transportation in a-Ta2O5 based RRAM devices. Experimental and theoretical results confirmed the formation of TiON layer between a-Ta2O5 and active electrode (TiN), suggesting that the bipolar resistive switching phenomenon of the proposed device was based on oxygen vacancy (Vo). © 2021 Elsevier B.V. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.title | Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000660308600003 | - |
dc.identifier.doi | 10.1016/j.jallcom.2021.160204 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.877 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85105572580 | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 877 | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Memristor | - |
dc.subject.keywordAuthor | Resistive switching, neuromorphic, Theoretical work | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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