Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications
- Authors
- Rasheed, Umbreen; Ryu, Hojeong; Mahata, Chandreswar; Khalil, Rana M. Arif; Imran, Muhammad; Rana, Anwar Manzoor; Kousar, Farhana; Kim, Boram; Kim, Yoon; Cho, Seongjae; Hussain, Fayyaz; Kim, Sungjun
- Issue Date
- 5-Oct-2021
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Memristor; Resistive switching, neuromorphic, Theoretical work
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.877
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 877
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/81472
- DOI
- 10.1016/j.jallcom.2021.160204
- ISSN
- 0925-8388
- Abstract
- Internet of things and big data demand the development of new techniques for memory devices going beyond conventional ways of memorizing and computing. In this work, we fabricated a Pt/a-Ta2O5/TiN resistive switching memory device and demonstrated its resistive and synaptic characteristics. Firstly, X-ray photoelectron spectroscopy (XPS) of a-Ta2O5/TiN analysis was conducted to determine elemental compositions of a-Ta2O5/TiN and TiON interfacial layer between a-Ta2O5 and TiN layer. Repetitive bipolar resistive switching was achieved by a set at a negative bias and a reset at a positive bias. Moreover, its biological potentiation and depression behaviors were well emulated by applying a repetitive pulse on the device. For deep understanding of this device's properties based on materials, oxygen vacancies, and stack engineering, theoretical calculations were performed employing Vienna ab-initio simulation Package (VASP) code. All calculations were carried out using PBE and GGA+U method to obtain accurate results. Work function difference between electrodes provided a localized path for forming a Vo based conducting filament in a-Ta2O5. Iso-surface charge density plots confirmed the formation of intrinsic Vo based conducting filaments in a-Ta2O5. These conducting filaments became stronger with increasing concentration of Vos in a-Ta2O5. Integrated charge density, density of states (DOS), and potential line ups also confirmed that Vo was responsible for charge transportation in a-Ta2O5 based RRAM devices. Experimental and theoretical results confirmed the formation of TiON layer between a-Ta2O5 and active electrode (TiN), suggesting that the bipolar resistive switching phenomenon of the proposed device was based on oxygen vacancy (Vo). © 2021 Elsevier B.V.
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