Synthesis and Characterization of Hf-0.5 Zr0.5O2 (HZO) Ceramic Target via Modified Solid-State Reaction Method
- Authors
- Lee, Shin Kyu; Kim, Sangmo; Bark, Chung Wung
- Issue Date
- May-2021
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Hfo(2); FeRAM; Target; Ball Milling; Solid-State Reaction
- Citation
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.16, no.5, pp.833 - 837
- Journal Title
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
- Volume
- 16
- Number
- 5
- Start Page
- 833
- End Page
- 837
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/82095
- DOI
- 10.1166/jno.2021.3010
- ISSN
- 1555-130X
- Abstract
- Ferroelectric random-access memory (FeRAM) is non-volatile, facilitates data storage via ferroelectricity, and it has attracted research attention as potential data storage means in high-performance computing applications. However, retention and fatigue problems have hampered its commercialization. Recently, the atomically controllable HfO2 FeRAM with high-density-storage capability has been developed. Although HfO2 is compatible with silicon-based fabrication technologies, its experimental realization is yet to be investigated. Thus, in this study, we have synthesized ZrO2 -doped HfO2 (also referred to as HfO5 Zr0.5O2 or HZO) with enhanced operating characteristics via a solid-state reaction and optimized ball-milling process. The HZO ceramic targets are sintered at different temperatures between 1000 degrees C and 1600 degrees C, and the influence of the sintering temperature on the HZO target properties is investigated. As observed, the HZO target sintered at 1600 degrees C optimum for film growth.
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