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Layer Thickness Dependency of Oxide-Metal-Oxide Electrode on the Electrical Performance of Oxide Thin Film Transistors
- Authors
- Lee, Sang Yeol
- Issue Date
- Oct-2021
- Publisher
- Korean Institute of Electrical and Electronic Material Engineers
- Keywords
- Amorphous; OMO; TFT; Transparent electrode
- Citation
- Transactions on Electrical and Electronic Materials, v.22, no.5, pp.593 - 597
- Journal Title
- Transactions on Electrical and Electronic Materials
- Volume
- 22
- Number
- 5
- Start Page
- 593
- End Page
- 597
- ISSN
- 1229-7607
- Abstract
- Transparent oxide-metal-oxide (OMO) of SiInZnO/Ag/SiInZnO (SAS) electrodes have been used for source and drain (S/D) electrodes to process transparent thin film transistors (TFTs) with high performance. Amorphous oxide semiconducting Si-In-Zn-O (SIZO) has been used as a fully transparent channel layer with OMO electrodes with different layer thickness. Layer thickness dependency of the electrical performance of TFTs using SIZO containing 1 wt% Si (1SIZO) TFT has been investigated and analyzed. The electrical performance and the optical properties between different thickness OMO electrodes have been compared and optimized.
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