Structural properties of LaAlO3/SrTiO3 interfaces deposited by using off-axis RF sputtering
- Authors
- Kim, Do Hyun; Bark, Chung Wung
- Issue Date
- Jun-2016
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- 2D electron gas; Off-axis sputtering; X-ray reflectivity; Scanning electron microscopy
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.68, no.12, pp.1395 - 1398
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 68
- Number
- 12
- Start Page
- 1395
- End Page
- 1398
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/8257
- DOI
- 10.3938/jkps.68.1395
- ISSN
- 0374-4884
- Abstract
- To demonstrate the capability of growing conductive interfaces through large-scale deposition, we deposited amorphous LaAlO3(LAO)/SrTiO3(STO) by using off-axis RF-sputtering. The LAO/STO thin film deposited within the 2.0-inch range exhibited conducting properties. To confirm the structural properties and ensure accurate characterization of the LAO/STO films prepared by using off-axis sputtering, we performed X-ray reflectivity (XRR) and scanning electron microscopy (SEM) measurements. This paper reports on the structural properties of LAO/STO interfaces and discusses the interfacial quality and layer-to-layer uniformity based on a fitting of the XRR data. In terms of structural properties, the LAO/STO film deposited within the 1.35-inch range had the best surface among all investigated samples.
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