Effects of Drying Temperature and Molar Concentration on Structural, Optical, and Electrical Properties of beta-Ga2O3 Thin Films Fabricated by Sol-Gel Method
- Authors
- Park, Taejun; Kim, Kyunghwan; Hong, Jeongsoo
- Issue Date
- Nov-2021
- Publisher
- MDPI
- Keywords
- Film; Semiconductor; Solution process; Sol–gel; β-Ga2O3
- Citation
- Coatings, v.11, no.11
- Journal Title
- Coatings
- Volume
- 11
- Number
- 11
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/82954
- DOI
- 10.3390/coatings11111391
- ISSN
- 2079-6412
- Abstract
- In this study, β-Ga2O3 films were fabricated on a quartz substrate by the sol–gel method using different drying temperatures and solutions of different molar concentrations, and their struc-tural, optical, and electrical properties were evaluated. The as-fabricated films exhibited a monoclinic β-Ga2O3 crystal structure, whose crystallinity and crystallite size increased with increasing molar concentration of the solutions used and increasing drying temperature. Scanning electron microscopy of the as-prepared samples revealed dense surface morphologies and that the thickness of the films also depended on the deposition conditions. The average transmittance of all the samples was above 8% in visible light, and the calculated optical bandgap energy was 4.9 eV. The resistivity measured using a 4-point probe system was 3.7 × 103 Ω cm. © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
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