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Three-dimensional Modeling for the Transmittance of ITO/Mesh-Ag/ITO Multilayers using FDTD

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dc.contributor.authorCho, Eou-Sik-
dc.contributor.authorKwon, Sang Jik-
dc.date.accessioned2021-12-31T01:40:45Z-
dc.date.available2021-12-31T01:40:45Z-
dc.date.created2021-10-27-
dc.date.issued2021-10-
dc.identifier.issn1598-1657-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/83045-
dc.description.abstractIn order to improve the transmittance of ITO/Ag/ITO multilayers, Ag layer was formed with mesh structure. For more accurate and practical analysis, we performed the simulations using an optical wave simulator termed the full-wave simulation program. In our simulations, the three dimensional (3D) finite-difference time-domain (FDTD) method was used to realize the high density mesh structure, and a plane wave with variable wavelengths ranging from 250 to 850 nm is incident in the z-direction at normal incidence to the ITO/Mesh-Ag/ITO film surrounded by free-air space. From the simulation results, at a higher open ratio and lower Ag thickness, the transmittance of ITO/Mesh-Ag/ITO were not influenced by other parameters. Experimental measurements were performed depending on the various Ag mesh-spaces and mesh-widths. The open ratio of about 60 % has shown the acceptable results in the points of both the optical transmittance and the electrical conductance.-
dc.language영어-
dc.language.isoen-
dc.publisher대한전자공학회-
dc.relation.isPartOfJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.titleThree-dimensional Modeling for the Transmittance of ITO/Mesh-Ag/ITO Multilayers using FDTD-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass1-
dc.identifier.wosid000780232400007-
dc.identifier.doi10.5573/JSTS.2021.21.5.348-
dc.identifier.bibliographicCitationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.21, no.5, pp.348 - 355-
dc.identifier.kciidART002766984-
dc.description.isOpenAccessN-
dc.identifier.scopusid2-s2.0-85126748478-
dc.citation.endPage355-
dc.citation.startPage348-
dc.citation.titleJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.citation.volume21-
dc.citation.number5-
dc.contributor.affiliatedAuthorCho, Eou-Sik-
dc.contributor.affiliatedAuthorKwon, Sang Jik-
dc.type.docTypeArticle-
dc.subject.keywordAuthorTransparent conductive oxide-
dc.subject.keywordAuthormesh structure-
dc.subject.keywordAuthorITO/mesh-Ag/ITO multiple layer-
dc.subject.keywordAuthorfull-wave simulation-
dc.subject.keywordAuthor3D FDTD method-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
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반도체대학 (반도체·전자공학부)
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