Three-dimensional Modeling for the Transmittance of ITO/Mesh-Ag/ITO Multilayers using FDTD
DC Field | Value | Language |
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dc.contributor.author | Cho, Eou-Sik | - |
dc.contributor.author | Kwon, Sang Jik | - |
dc.date.accessioned | 2021-12-31T01:40:45Z | - |
dc.date.available | 2021-12-31T01:40:45Z | - |
dc.date.created | 2021-10-27 | - |
dc.date.issued | 2021-10 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/83045 | - |
dc.description.abstract | In order to improve the transmittance of ITO/Ag/ITO multilayers, Ag layer was formed with mesh structure. For more accurate and practical analysis, we performed the simulations using an optical wave simulator termed the full-wave simulation program. In our simulations, the three dimensional (3D) finite-difference time-domain (FDTD) method was used to realize the high density mesh structure, and a plane wave with variable wavelengths ranging from 250 to 850 nm is incident in the z-direction at normal incidence to the ITO/Mesh-Ag/ITO film surrounded by free-air space. From the simulation results, at a higher open ratio and lower Ag thickness, the transmittance of ITO/Mesh-Ag/ITO were not influenced by other parameters. Experimental measurements were performed depending on the various Ag mesh-spaces and mesh-widths. The open ratio of about 60 % has shown the acceptable results in the points of both the optical transmittance and the electrical conductance. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | 대한전자공학회 | - |
dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.title | Three-dimensional Modeling for the Transmittance of ITO/Mesh-Ag/ITO Multilayers using FDTD | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000780232400007 | - |
dc.identifier.doi | 10.5573/JSTS.2021.21.5.348 | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.21, no.5, pp.348 - 355 | - |
dc.identifier.kciid | ART002766984 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85126748478 | - |
dc.citation.endPage | 355 | - |
dc.citation.startPage | 348 | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 21 | - |
dc.citation.number | 5 | - |
dc.contributor.affiliatedAuthor | Cho, Eou-Sik | - |
dc.contributor.affiliatedAuthor | Kwon, Sang Jik | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Transparent conductive oxide | - |
dc.subject.keywordAuthor | mesh structure | - |
dc.subject.keywordAuthor | ITO/mesh-Ag/ITO multiple layer | - |
dc.subject.keywordAuthor | full-wave simulation | - |
dc.subject.keywordAuthor | 3D FDTD method | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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