Energy-Band Engineering by Remote Doping of Self-Assembled Monolayers Leads to High-Performance IGZO/p-Si Heterostructure Photodetectors
DC Field | Value | Language |
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dc.contributor.author | Woo, Gunhoo | - |
dc.contributor.author | Lee, Dong Hyun | - |
dc.contributor.author | Heo, Yeri | - |
dc.contributor.author | Kim, Eungchul | - |
dc.contributor.author | On, Sungmin | - |
dc.contributor.author | Kim, Taesung | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.date.accessioned | 2022-02-27T02:40:32Z | - |
dc.date.available | 2022-02-27T02:40:32Z | - |
dc.date.created | 2021-12-26 | - |
dc.date.issued | 2022-02 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/83565 | - |
dc.description.abstract | Metal oxide semiconductors are of great interest for enabling advanced photodetectors. However, operational instability and the absence of an appropriate doping technique hinder practical development and commercialization. Here, a strategy is proposed to dramatically increase the conventional photodetection performance, having superior stability in operational and environmental atmospheres. By performing energy-band engineering through an octadecylphosphonic acid (ODPA) self-assembled-monolayer-based doping treatment, the proposed indium-gallium-zinc oxide (IGZO)/p-Si heterointerface devices exhibit greatly enhance the photoresponsive characteristics, including a photoswitching current ratio with a 100-fold increase, and photoresponsivity and detectivity with a 15-fold increase each. The observed ODPA doping effects are investigated through comprehensive analysis with X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM). Furthermore, the proposed photodetectors, fabricated at a 4 in. wafer scale, demonstrate its excellent operation robustness with consistent performance over 237 days and 20 000 testing cycles. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.relation.isPartOf | ADVANCED MATERIALS | - |
dc.title | Energy-Band Engineering by Remote Doping of Self-Assembled Monolayers Leads to High-Performance IGZO/p-Si Heterostructure Photodetectors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000732692200001 | - |
dc.identifier.doi | 10.1002/adma.202107364 | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.34, no.6 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85121490457 | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 34 | - |
dc.citation.number | 6 | - |
dc.contributor.affiliatedAuthor | Lee, Dong Hyun | - |
dc.contributor.affiliatedAuthor | Heo, Yeri | - |
dc.contributor.affiliatedAuthor | Yoo, Hocheon | - |
dc.type.docType | Article; Early Access | - |
dc.subject.keywordAuthor | electrical doping | - |
dc.subject.keywordAuthor | heterostructures | - |
dc.subject.keywordAuthor | negative differential resistance | - |
dc.subject.keywordAuthor | photodetectors | - |
dc.subject.keywordAuthor | photodiodes | - |
dc.subject.keywordPlus | HETEROJUNCTION | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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