Energy-Band Engineering by Remote Doping of Self-Assembled Monolayers Leads to High-Performance IGZO/p-Si Heterostructure Photodetectors
- Authors
- Woo, Gunhoo; Lee, Dong Hyun; Heo, Yeri; Kim, Eungchul; On, Sungmin; Kim, Taesung; Yoo, Hocheon
- Issue Date
- Feb-2022
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- electrical doping; heterostructures; negative differential resistance; photodetectors; photodiodes
- Citation
- ADVANCED MATERIALS, v.34, no.6
- Journal Title
- ADVANCED MATERIALS
- Volume
- 34
- Number
- 6
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/83565
- DOI
- 10.1002/adma.202107364
- ISSN
- 0935-9648
- Abstract
- Metal oxide semiconductors are of great interest for enabling advanced photodetectors. However, operational instability and the absence of an appropriate doping technique hinder practical development and commercialization. Here, a strategy is proposed to dramatically increase the conventional photodetection performance, having superior stability in operational and environmental atmospheres. By performing energy-band engineering through an octadecylphosphonic acid (ODPA) self-assembled-monolayer-based doping treatment, the proposed indium-gallium-zinc oxide (IGZO)/p-Si heterointerface devices exhibit greatly enhance the photoresponsive characteristics, including a photoswitching current ratio with a 100-fold increase, and photoresponsivity and detectivity with a 15-fold increase each. The observed ODPA doping effects are investigated through comprehensive analysis with X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM). Furthermore, the proposed photodetectors, fabricated at a 4 in. wafer scale, demonstrate its excellent operation robustness with consistent performance over 237 days and 20 000 testing cycles.
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