Solution-Processed Black-Si/Cu2ZnSnS4 Nanocrystal Heterojunctions for Self-Powered Broadband Photodetectors and Photovoltaic Devices
- Authors
- Singh, Sudarshan; Sarkar, Arijit; Goswami, Dipak K.; Ray, Samit K.
- Issue Date
- Apr-2021
- Publisher
- AMER CHEMICAL SOC
- Keywords
- black silicon (B-Si); CZTS nanocrystals; radial heterojunction; self-powered photodetector; photovoltaic devices
- Citation
- ACS APPLIED ENERGY MATERIALS, v.4, no.4, pp.4090 - 4098
- Journal Title
- ACS APPLIED ENERGY MATERIALS
- Volume
- 4
- Number
- 4
- Start Page
- 4090
- End Page
- 4098
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/84790
- DOI
- 10.1021/acsaem.1c00448
- ISSN
- 2574-0962
- Abstract
- We report, for the first time, the fabrication of n-black Si (B-Si)/p-Cu2ZnSnS4 nanocrystal (CZTS NC) heterojunctions to demonstrate their photodetection and photovoltaic characteristics. Inks with crystalline CZTS NCs can be directly spin coated on an ultralow reflective (<1.5% in the visible range) metal-assisted chemical-etched black Si to fabricate solution-processed B-Si/CZTS heterojunctions, with the process compatible for large area applications. Fabricated devices operate as self-powered visible to near infrared (vis-NIR) wideband photodetectors, with a high I-ph/I-dark ratio of similar to 10(5), a very fast switching speed (similar to mu s), and remarkably high figure-of-merits at zero bias. Furthermore, an optimal thickness of NC layers exhibits superior photovoltaic characteristics with an efficiency >5.0%, even without any surface passivation or encapsulation of the device. The combined studies show impactful potential of the B-Si/CZTS NC heterojunction for future high-speed light-sensing and energy-harvesting devices using solution-processed techniques compatible to large area applications.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/84790)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.