Accurate parametrization revealing an extremely low disorder in polymer field-effect transistors
- Authors
- Romanjek, Krunoslav; Charbonneau, Micael; Kim, Chang-Hyun
- Issue Date
- Jun-2022
- Publisher
- IOP Publishing Ltd
- Keywords
- printed electronics; organic field-effect transistors; parameter extraction methods; charge-carrier mobility; contact resistance
- Citation
- FLEXIBLE AND PRINTED ELECTRONICS, v.7, no.2
- Journal Title
- FLEXIBLE AND PRINTED ELECTRONICS
- Volume
- 7
- Number
- 2
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/84932
- DOI
- 10.1088/2058-8585/ac72dd
- ISSN
- 2058-8585
- Abstract
- In this paper, a robust self-consistent parameter extraction method is applied to high-performance p-type printed polymer field-effect transistors. Simultaneous extraction of contact resistance and intrinsic channel mobility with their full gate-voltage dependence is achieved through an analytically reinforced transmission-line method. The proposed method yields a minimum width-normalized contact resistance of 12 k omega cm and a maximum hole mobility of 1.9 cm(2) V-1 s(-1). Moreover, the gate-voltage-dependent mobility is interpreted in the framework of trap-and-release transport through double-exponential density of states, unveiling a disorder energy near the transport orbital as low as 29 meV.
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