DC 스퍼터링 및 급속 열처리 공정을 이용한 사파이어 기판상 에 형성된 2차원 황화몰리브덴 박막의 특성에 관한 연구

Abstract

For the realization of higher reliable transition metal dichalcogenide layer, molybdenum disulfide was formed on sapphire substrate by direct current sputtering and subsequent rapid thermal annealing process. Unlike RF sputtered MoS2 thin films, DC sputtered showed no irregular holes and protrusions after annealing process from scanning electron microscope images. From atomic force microscope results, it was possible to investigate that surface roughness of MoS2 thin films were more dependent on DC sputtering power then annealing temperature. On the other hand, the Raman scattering spectra showed the dependency of significant E1 2g and A1 g peaks on annealing temperatures.