Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
DC 스퍼터링 및 급속 열처리 공정을 이용한 사파이어 기판상 에 형성된 2차원 황화몰리브덴 박막의 특성에 관한 연구A Study on the Characteristics of 2-Dimensinal Molybdenum Disulfide Thin Films formed on Sapphire Substrates by DC Sputtering and Rapid Thermal Annealing
- Other Titles
- A Study on the Characteristics of 2-Dimensinal Molybdenum Disulfide Thin Films formed on Sapphire Substrates by DC Sputtering and Rapid Thermal Annealing
- Issue Date
- Sep-2022
- Publisher
- 한국반도체디스플레이기술학회
- Keywords
- Molybdenum disulfide (MoS2); Direct current(DC) sputtering; Rapid thermal annealing (RTA); Sputtering power; RTA temperature
- Citation
- 반도체디스플레이기술학회지, v.21, no.3, pp.105 - 109
- Journal Title
- 반도체디스플레이기술학회지
- Volume
- 21
- Number
- 3
- Start Page
- 105
- End Page
- 109
- ISSN
- 1738-2270
- Abstract
- For the realization of higher reliable transition metal dichalcogenide layer, molybdenum disulfide was formed on sapphire substrate by direct current sputtering and subsequent rapid thermal annealing process. Unlike RF sputtered MoS2 thin films, DC sputtered showed no irregular holes and protrusions after annealing process from scanning electron microscope images. From atomic force microscope results, it was possible to investigate that surface roughness of MoS2 thin films were more dependent on DC sputtering power then annealing temperature. On the other hand, the Raman scattering spectra showed the dependency of significant E1 2g and A1 g peaks on annealing temperatures.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.