A Complementary Logic-in-Memory Inverter From Organic-Inorganic Hybrid Transistors
- Authors
- Seo, Juhyung; Kim, Seongjae; Yoo, Hocheon
- Issue Date
- Nov-2022
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Inverters; Electron traps; Nonvolatile memory; Thin film transistors; Transistors; Logic gates; Electrodes; Organic semiconductors; oxide semiconductors; thin-film transistors; complementary inverter circuit; logic-in-memory circuit
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.43, no.11, pp.1902 - 1904
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 43
- Number
- 11
- Start Page
- 1902
- End Page
- 1904
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/86204
- DOI
- 10.1109/LED.2022.3208194
- ISSN
- 0741-3106
- Abstract
- Logic-in-memory (LIM) technology is an important technology that overcomes the bottleneck, a limitation of the von Neumann architecture. As described in previous reports, the LIM technology was fabricated with a resistive load inverter structure. However, there are some limitations due to the high-power consumption issue and low noise margin. As a result, the need for a LIM device with a complementary structure has emerged. Here, we propose a LIM architecture-based organic-inorganic complementary inverter circuit with a stable noise margin using a p-type floating-gate transistor memory (FGTM) and an n-type zinc-tin oxide (ZTO) thin-film transistor (TFT). We demonstrate that the output of the proposed complementary inverter circuit is determined according to the state of the FGTM memory.
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