Phase-Controlled Artificial SiZnSnO/P(VDF-TrFE) Synaptic Devices with a High Dynamic Range for Neuromorphic Computing
DC Field | Value | Language |
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dc.contributor.author | Lee, Byeong Hyeon | - |
dc.contributor.author | Lee, Ji Ye | - |
dc.contributor.author | Kumar, Akash | - |
dc.contributor.author | Lee, Sang Yeol | - |
dc.date.accessioned | 2022-12-26T02:40:10Z | - |
dc.date.available | 2022-12-26T02:40:10Z | - |
dc.date.created | 2022-10-28 | - |
dc.date.issued | 2022-12 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/86316 | - |
dc.description.abstract | Artificial synapses, such as ferroelectric field-effect transistors, aspire the brain-like computation in real life and are likely to replace conventional computing methods in the future. Amorphous SiZnSnO (a-SZTO)-based ferroelectric field-effect transistor is fabricated using the organic poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) ferroelectric gate insulating layer. First, the ferroelectric properties of P(VDF-TrFE) are analyzed depending on the crystallization temperature for artificial synaptic transistor applications. The ferroelectricity becomes prominent with the evolution of the beta-phase till 140 degrees C and degrades thereafter. The a-SZTO-based ferroelectric field-effect transistors employing P(VDF-TrFE) show anticlockwise hysteresis, typical for a ferroelectric field-effect transistor. The nonlinearity for the potentiation and depression and the dynamic range is confirmed to be increased with higher beta-phase concentration. The rise in the concentration is related to the elevated thermodynamic stability of the beta-phase between curie temperature and the melting point. Utilizing the parameters obtained from the a-SZTO-P(VDF-TrFE) synaptic transistor, the simulation studies exhibit a high recognition rate of 86.8%, which makes it a promising candidate for artificial intelligence applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.relation.isPartOf | ADVANCED ELECTRONIC MATERIALS | - |
dc.title | Phase-Controlled Artificial SiZnSnO/P(VDF-TrFE) Synaptic Devices with a High Dynamic Range for Neuromorphic Computing | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000860173500001 | - |
dc.identifier.doi | 10.1002/aelm.202200810 | - |
dc.identifier.bibliographicCitation | ADVANCED ELECTRONIC MATERIALS, v.8, no.12 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85138622378 | - |
dc.citation.title | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.volume | 8 | - |
dc.citation.number | 12 | - |
dc.contributor.affiliatedAuthor | Lee, Byeong Hyeon | - |
dc.contributor.affiliatedAuthor | Lee, Ji Ye | - |
dc.contributor.affiliatedAuthor | Kumar, Akash | - |
dc.contributor.affiliatedAuthor | Lee, Sang Yeol | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | amorphous oxide semiconductors | - |
dc.subject.keywordAuthor | artificial synaptic devices | - |
dc.subject.keywordAuthor | dynamic range | - |
dc.subject.keywordAuthor | ferroelectric field-effect transistors | - |
dc.subject.keywordAuthor | Modified National Institute of Standards and Technology (MNIST) | - |
dc.subject.keywordAuthor | P(VDF-TrFE) | - |
dc.subject.keywordPlus | ENERGY BANDGAP | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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