Step-like current-voltage thin-film transistors with amorphous SiZnSnO/ SiInZnO/SiZnSnO multilayered-channels
DC Field | Value | Language |
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dc.contributor.author | Murugan, Balaji | - |
dc.contributor.author | Lee, Sang Yeol | - |
dc.date.accessioned | 2023-01-06T12:40:13Z | - |
dc.date.available | 2023-01-06T12:40:13Z | - |
dc.date.created | 2022-12-16 | - |
dc.date.issued | 2022-12 | - |
dc.identifier.issn | 1387-7003 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/86471 | - |
dc.description.abstract | Multi-valued logic (MVL) is a critical approach for high-density information and next-generation digital elec-tronics. Recently developed multilayered-channel structure electronic devices provide new transistor operation of multi-valued logic switching characteristics. This paper investigates the step-like transfer curves of the amorphous SiZnSnO/SiInZnO/SiZnSnO (a-SZTO/SIZO/SZTO or a-SSS) multilayered-channel thin-film transistors (TFTs). The step-like transfer curves of a-SSS TFTs can be tuned intentionally by varying the thickness of the top and bottom layers of a-SZTO mainly because a low conducting material is introduced as a barrier layer to separate the top and bottom layers to obtain the intermediate states. Additionally, the conducting nature of the middle/barrier layer of a-SIZO was varied and studied for different Si concentrations. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.relation.isPartOf | INORGANIC CHEMISTRY COMMUNICATIONS | - |
dc.title | Step-like current-voltage thin-film transistors with amorphous SiZnSnO/ SiInZnO/SiZnSnO multilayered-channels | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000874693200005 | - |
dc.identifier.doi | 10.1016/j.inoche.2022.110094 | - |
dc.identifier.bibliographicCitation | INORGANIC CHEMISTRY COMMUNICATIONS, v.146 | - |
dc.description.isOpenAccess | N | - |
dc.citation.title | INORGANIC CHEMISTRY COMMUNICATIONS | - |
dc.citation.volume | 146 | - |
dc.contributor.affiliatedAuthor | Murugan, Balaji | - |
dc.contributor.affiliatedAuthor | Lee, Sang Yeol | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Multilayer | - |
dc.subject.keywordAuthor | TFTs | - |
dc.subject.keywordAuthor | Current -voltage | - |
dc.subject.keywordAuthor | Thickness | - |
dc.subject.keywordAuthor | Si concentration | - |
dc.subject.keywordAuthor | SZTO | - |
dc.subject.keywordAuthor | SIZO | - |
dc.subject.keywordAuthor | SZTO channel | - |
dc.subject.keywordPlus | TERNARY LOGIC | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | DESIGN | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Inorganic & Nuclear | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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