Step-like current-voltage thin-film transistors with amorphous SiZnSnO/ SiInZnO/SiZnSnO multilayered-channels
- Authors
- Murugan, Balaji; Lee, Sang Yeol
- Issue Date
- Dec-2022
- Publisher
- ELSEVIER
- Keywords
- Multilayer; TFTs; Current -voltage; Thickness; Si concentration; SZTO; SIZO; SZTO channel
- Citation
- INORGANIC CHEMISTRY COMMUNICATIONS, v.146
- Journal Title
- INORGANIC CHEMISTRY COMMUNICATIONS
- Volume
- 146
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/86471
- DOI
- 10.1016/j.inoche.2022.110094
- ISSN
- 1387-7003
- Abstract
- Multi-valued logic (MVL) is a critical approach for high-density information and next-generation digital elec-tronics. Recently developed multilayered-channel structure electronic devices provide new transistor operation of multi-valued logic switching characteristics. This paper investigates the step-like transfer curves of the amorphous SiZnSnO/SiInZnO/SiZnSnO (a-SZTO/SIZO/SZTO or a-SSS) multilayered-channel thin-film transistors (TFTs). The step-like transfer curves of a-SSS TFTs can be tuned intentionally by varying the thickness of the top and bottom layers of a-SZTO mainly because a low conducting material is introduced as a barrier layer to separate the top and bottom layers to obtain the intermediate states. Additionally, the conducting nature of the middle/barrier layer of a-SIZO was varied and studied for different Si concentrations.
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