Mechanically robust stretchable semiconductor metallization for skin-inspired organic transistorsopen access
- Authors
- Kim, Min Hyouk; Jeong, Min Woo; Kim, Jun Su; Nam, Tae Uk; Ngoc Thanh Phuong Vo; Jin, Lihua; Lee, Tae Il; Oh, Jin Young
- Issue Date
- Dec-2022
- Publisher
- AMER ASSOC ADVANCEMENT SCIENCE
- Citation
- SCIENCE ADVANCES, v.8, no.51
- Journal Title
- SCIENCE ADVANCES
- Volume
- 8
- Number
- 51
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/87031
- DOI
- 10.1126/sciadv.ade2988
- ISSN
- 2375-2548
- Abstract
- Despite recent remarkable advances in stretchable organic thin-film field-effect transistors (OTFTs), the devel-opment of stretchable metallization remains a challenge. Here, we report a highly stretchable and robust met-allization on an elastomeric semiconductor film based on metal-elastic semiconductor intermixing. We found that vaporized silver (Ag) atom with higher diffusivity than other noble metals (Au and Cu) forms a continuous intermixing layer during thermal evaporation, enabling highly stretchable metallization. The Ag metallization maintains a high conductivity (>10(4) S/cm) even under 100% strain and successfully preserves its conductivity without delamination even after 10,000 stretching cycles at 100% strain and several adhesive tape tests. More-over, a native silver oxide layer formed on the intermixed Ag clusters facilitates efficient hole injection into the elastomeric semiconductor, which transcends previously reported stretchable source and drain electrodes for OTFTs.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 공과대학 > 신소재공학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/87031)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.