Air-stable ambipolar charge transport behaviors of organic-inorganic hybrid bilayer and application to Au nanoparticle-based floating gate memory
DC Field | Value | Language |
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dc.contributor.author | Jeon, Yunchae | - |
dc.contributor.author | Seo, Juhyung | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.date.accessioned | 2023-03-14T07:40:17Z | - |
dc.date.available | 2023-03-14T07:40:17Z | - |
dc.date.created | 2023-03-13 | - |
dc.date.issued | 2023-03 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/87098 | - |
dc.description.abstract | Ambipolar-based devices are considered effective alternatives in various applications, including re configurable logic, light-emitting transistors, and neuromorphic devices. On the other hand, the previously reported intrinsic single-layer ambipolar materials have limitations, such as high instability in ambient air and asymmetric transport of electrons and holes. In the present study, high air-stable and symmetrical ambipolar behavior were implemented using an organic-inorganic bilayer. An ambipolar-based memory application was implemented using these characteristics. This fabricated memory device used electrons and holes together with dinaphtho[2,3-b:2 ',3 '-f]thieno[3,2-b]thiophene organic p-type and zinc tin oxide inorganic n-type semiconductor heterojunction layers, resulting in wide memory window and high retention. In addition, these behaviors were analyzed at the band diagram level through ultraviolet photoelectron spectroscopy and ultraviolet-visible light spectroscopy, and chemical bonding was analyzed using x-ray photoelectron spectroscopy. These reports can provide useful strategies for applying various ambipolar applications in the future.(c) 2022 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.title | Air-stable ambipolar charge transport behaviors of organic-inorganic hybrid bilayer and application to Au nanoparticle-based floating gate memory | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000922199400001 | - |
dc.identifier.doi | 10.1016/j.jallcom.2022.168687 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.938 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85145722948 | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 938 | - |
dc.contributor.affiliatedAuthor | Jeon, Yunchae | - |
dc.contributor.affiliatedAuthor | Seo, Juhyung | - |
dc.contributor.affiliatedAuthor | Yoo, Hocheon | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Floating-gate | - |
dc.subject.keywordAuthor | Ambipolarity | - |
dc.subject.keywordAuthor | Bilayers | - |
dc.subject.keywordAuthor | Metal oxides | - |
dc.subject.keywordAuthor | Organic semiconductors | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE AMBIPOLAR | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | N-CHANNEL | - |
dc.subject.keywordPlus | SEMICONDUCTING MATERIALS | - |
dc.subject.keywordPlus | INVERTERS | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | ELECTRON | - |
dc.subject.keywordPlus | OXIDE | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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