Detailed Information

Cited 2 time in webofscience Cited 2 time in scopus
Metadata Downloads

Air-stable ambipolar charge transport behaviors of organic-inorganic hybrid bilayer and application to Au nanoparticle-based floating gate memory

Full metadata record
DC Field Value Language
dc.contributor.authorJeon, Yunchae-
dc.contributor.authorSeo, Juhyung-
dc.contributor.authorYoo, Hocheon-
dc.date.accessioned2023-03-14T07:40:17Z-
dc.date.available2023-03-14T07:40:17Z-
dc.date.created2023-03-13-
dc.date.issued2023-03-
dc.identifier.issn0925-8388-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/87098-
dc.description.abstractAmbipolar-based devices are considered effective alternatives in various applications, including re configurable logic, light-emitting transistors, and neuromorphic devices. On the other hand, the previously reported intrinsic single-layer ambipolar materials have limitations, such as high instability in ambient air and asymmetric transport of electrons and holes. In the present study, high air-stable and symmetrical ambipolar behavior were implemented using an organic-inorganic bilayer. An ambipolar-based memory application was implemented using these characteristics. This fabricated memory device used electrons and holes together with dinaphtho[2,3-b:2 ',3 '-f]thieno[3,2-b]thiophene organic p-type and zinc tin oxide inorganic n-type semiconductor heterojunction layers, resulting in wide memory window and high retention. In addition, these behaviors were analyzed at the band diagram level through ultraviolet photoelectron spectroscopy and ultraviolet-visible light spectroscopy, and chemical bonding was analyzed using x-ray photoelectron spectroscopy. These reports can provide useful strategies for applying various ambipolar applications in the future.(c) 2022 Elsevier B.V. All rights reserved.-
dc.language영어-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE SA-
dc.relation.isPartOfJOURNAL OF ALLOYS AND COMPOUNDS-
dc.titleAir-stable ambipolar charge transport behaviors of organic-inorganic hybrid bilayer and application to Au nanoparticle-based floating gate memory-
dc.typeArticle-
dc.type.rimsART-
dc.description.journalClass1-
dc.identifier.wosid000922199400001-
dc.identifier.doi10.1016/j.jallcom.2022.168687-
dc.identifier.bibliographicCitationJOURNAL OF ALLOYS AND COMPOUNDS, v.938-
dc.description.isOpenAccessN-
dc.identifier.scopusid2-s2.0-85145722948-
dc.citation.titleJOURNAL OF ALLOYS AND COMPOUNDS-
dc.citation.volume938-
dc.contributor.affiliatedAuthorJeon, Yunchae-
dc.contributor.affiliatedAuthorSeo, Juhyung-
dc.contributor.affiliatedAuthorYoo, Hocheon-
dc.type.docTypeArticle-
dc.subject.keywordAuthorFloating-gate-
dc.subject.keywordAuthorAmbipolarity-
dc.subject.keywordAuthorBilayers-
dc.subject.keywordAuthorMetal oxides-
dc.subject.keywordAuthorOrganic semiconductors-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusHIGH-PERFORMANCE AMBIPOLAR-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusN-CHANNEL-
dc.subject.keywordPlusSEMICONDUCTING MATERIALS-
dc.subject.keywordPlusINVERTERS-
dc.subject.keywordPlusSTABILITY-
dc.subject.keywordPlusELECTRON-
dc.subject.keywordPlusOXIDE-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaMetallurgy & Metallurgical Engineering-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryMetallurgy & Metallurgical Engineering-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
Files in This Item
There are no files associated with this item.
Appears in
Collections
IT융합대학 > 전자공학과 > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Yoo, Ho Cheon photo

Yoo, Ho Cheon
반도체대학 (반도체·전자공학부)
Read more

Altmetrics

Total Views & Downloads

BROWSE