Air-stable ambipolar charge transport behaviors of organic-inorganic hybrid bilayer and application to Au nanoparticle-based floating gate memory
- Authors
- Jeon, Yunchae; Seo, Juhyung; Yoo, Hocheon
- Issue Date
- Mar-2023
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Floating-gate; Ambipolarity; Bilayers; Metal oxides; Organic semiconductors
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.938
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 938
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/87098
- DOI
- 10.1016/j.jallcom.2022.168687
- ISSN
- 0925-8388
- Abstract
- Ambipolar-based devices are considered effective alternatives in various applications, including re configurable logic, light-emitting transistors, and neuromorphic devices. On the other hand, the previously reported intrinsic single-layer ambipolar materials have limitations, such as high instability in ambient air and asymmetric transport of electrons and holes. In the present study, high air-stable and symmetrical ambipolar behavior were implemented using an organic-inorganic bilayer. An ambipolar-based memory application was implemented using these characteristics. This fabricated memory device used electrons and holes together with dinaphtho[2,3-b:2 ',3 '-f]thieno[3,2-b]thiophene organic p-type and zinc tin oxide inorganic n-type semiconductor heterojunction layers, resulting in wide memory window and high retention. In addition, these behaviors were analyzed at the band diagram level through ultraviolet photoelectron spectroscopy and ultraviolet-visible light spectroscopy, and chemical bonding was analyzed using x-ray photoelectron spectroscopy. These reports can provide useful strategies for applying various ambipolar applications in the future.(c) 2022 Elsevier B.V. All rights reserved.
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