Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devicesopen access
- Authors
- Pyo, Juyeong; Bae, Jong-Ho; Kim, Sungjun; Cho, Seongjae
- Issue Date
- Feb-2023
- Publisher
- MDPI
- Keywords
- neuromorphic system; IGZO; three-terminal device; synaptic device; short-term memory
- Citation
- MATERIALS, v.16, no.3
- Journal Title
- MATERIALS
- Volume
- 16
- Number
- 3
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/87108
- DOI
- 10.3390/ma16031249
- ISSN
- 1996-1944
- Abstract
- A three-terminal synaptic transistor enables more accurate controllability over the conductance compared with traditional two-terminal synaptic devices for the synaptic devices in hardware-oriented neuromorphic systems. In this work, we fabricated IGZO-based three-terminal devices comprising HfAlOx and CeOx layers to demonstrate the synaptic operations. The chemical compositions and thicknesses of the devices were verified by transmission electron microscopy and energy dispersive spectroscopy in cooperation. The excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP), and short-term depression (STD) of the synaptic devices were realized for the short-term memory behaviors. The IGZO-based three-terminal synaptic transistor could thus be controlled appropriately by the amplitude, width, and interval time of the pulses for implementing the neuromorphic systems.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/87108)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.