Pre-State-Dependent Ternary/Binary Logic Operation Obtained by Inkjet Printed Indium Oxide and Single-Walled Carbon Nanotube/Indium Oxide Heterojunction-Based Transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Somi | - |
dc.contributor.author | Jung, Seoyeon | - |
dc.contributor.author | Kim, Bongjun | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.date.accessioned | 2023-05-16T08:42:01Z | - |
dc.date.available | 2023-05-16T08:42:01Z | - |
dc.date.created | 2023-05-15 | - |
dc.date.issued | 2023-02 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/87772 | - |
dc.description.abstract | This work proposes a pre-state-dependent ternary and binary logic inverter using a single-walled carbon nanotube (SWCNT)/indium oxide (InO) heterojunction field-effect transistor (H-FET) which is reliably formed by an inkjet printing method. The proposed device exhibits a logic-in-memory characteristic that operates in either ternary or binary mode depending on the previous output voltage state. Such previous state dependent ternary/binary operations are observed even after 4 days of exposure under ambient conditions and with 90 s of constant supply of bias stress. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.title | Pre-State-Dependent Ternary/Binary Logic Operation Obtained by Inkjet Printed Indium Oxide and Single-Walled Carbon Nanotube/Indium Oxide Heterojunction-Based Transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000965677400001 | - |
dc.identifier.doi | 10.1109/LED.2022.3232805 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.44, no.2, pp.265 - 268 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85136915150 | - |
dc.citation.endPage | 268 | - |
dc.citation.startPage | 265 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 44 | - |
dc.citation.number | 2 | - |
dc.contributor.affiliatedAuthor | Kim, Somi | - |
dc.contributor.affiliatedAuthor | Yoo, Hocheon | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Field effect transistors | - |
dc.subject.keywordAuthor | Behavioral sciences | - |
dc.subject.keywordAuthor | Ink jet printing | - |
dc.subject.keywordAuthor | Transmission line measurements | - |
dc.subject.keywordAuthor | Transient analysis | - |
dc.subject.keywordAuthor | Substrates | - |
dc.subject.keywordAuthor | Stress | - |
dc.subject.keywordAuthor | Multi-valued logic | - |
dc.subject.keywordAuthor | inverter circuit | - |
dc.subject.keywordAuthor | inkjet printing | - |
dc.subject.keywordAuthor | thin-film transistors | - |
dc.subject.keywordAuthor | logic-in-memory | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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