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Pre-State-Dependent Ternary/Binary Logic Operation Obtained by Inkjet Printed Indium Oxide and Single-Walled Carbon Nanotube/Indium Oxide Heterojunction-Based Transistors
- Authors
- Kim, Somi; Jung, Seoyeon; Kim, Bongjun; Yoo, Hocheon
- Issue Date
- Feb-2023
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Field effect transistors; Behavioral sciences; Ink jet printing; Transmission line measurements; Transient analysis; Substrates; Stress; Multi-valued logic; inverter circuit; inkjet printing; thin-film transistors; logic-in-memory
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.44, no.2, pp.265 - 268
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 44
- Number
- 2
- Start Page
- 265
- End Page
- 268
- ISSN
- 0741-3106
- Abstract
- This work proposes a pre-state-dependent ternary and binary logic inverter using a single-walled carbon nanotube (SWCNT)/indium oxide (InO) heterojunction field-effect transistor (H-FET) which is reliably formed by an inkjet printing method. The proposed device exhibits a logic-in-memory characteristic that operates in either ternary or binary mode depending on the previous output voltage state. Such previous state dependent ternary/binary operations are observed even after 4 days of exposure under ambient conditions and with 90 s of constant supply of bias stress.
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