Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistorsopen access
- Authors
- Lee, Song; Lee, Jeong-In; Kim, Chang-Hyun; Kwon, Jin-Hyuk; Lee, Jonghee; Boampong, Amos Amoako; Kim, Min-Hoi
- Issue Date
- Dec-2023
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- Zirconium acetylacetonates; solution-processes; charge-trap layers; thin-film memory transistors; multi-bits
- Citation
- SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, v.24, no.1
- Journal Title
- SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- Volume
- 24
- Number
- 1
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/88309
- DOI
- 10.1080/14686996.2023.2212112
- ISSN
- 1468-6996
- Abstract
- The charge trap property of solution-processed zirconium acetylacetonate (ZAA) for solution-processed nonvolatile charge-trap memory (CTM) transistors is demonstrated. Increasing the annealing temperature of the ZAA from room temperature (RT) to 300 degrees C in ambient, the carbon double bonds within the ZAA decreases. The RT-dried ZAA for the p-type organic-based CTM shows the widest threshold voltage shift (Delta V-TH approximate to 80 V), four distinct V-THs for a multi-bit memory operation and retained memory currents for 10(3) s with high memory on- and off-current ratio (I-M,I-ON/I-M,I-OFF approximate to 5X10(4)). The n-type oxide-based CTM (Ox-CTM) also shows a Delta V-TH of 14 V and retained memory currents for 10(3) s with I-M,I-ON/I-M,I-OFF approximate to 10(4). The inability of the Ox-CTM to be electrically erasable is well explained with simulated electrical potential contour maps. It is deduced that, irrespective of the varied solution-processed semiconductor used, the RT-dried organic ZAA as CTL shows the best memory functionality in the fabricated CTMs. This implies that the high carbon double bonds in the low-temperature processed ZAA CTL are very useful for low-cost multi-bit CTMs in flexible electronics. [GRAPHICS] .
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/88309)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.