Electron conduction mechanisms in magnetic tunnel junctions fabricated using amorphous Si-Zn-Sn-O as a low-resistive semiconducting barrier
- Authors
- Saha, D.; Lee, Sang Yeol
- Issue Date
- Jun-2023
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Amorphous semiconductor; Electron conduction; Inelastic scattering; Tunneling
- Citation
- Solid-State Electronics, v.204
- Journal Title
- Solid-State Electronics
- Volume
- 204
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/88796
- DOI
- 10.1016/j.sse.2023.108627
- ISSN
- 0038-1101
1879-2405
- Abstract
- CoFeB/ Si-Zn-Sn-O /CoFeB magnetic tunnel junctions (MTJs) have been fabricated using amorphous Si-Zn-Sn-O as a low-resistive semiconducting barrier. In the low bias voltage range (up to ∼0.2 V), direct tunneling is found to be the dominant transport mechanism in MTJs. Tunneling conduction is further verified by simulation of tunnel current density and differential conductance using Simmon's and Brinkmann model, respectively. Simulated results provided valuable insights into the barrier properties, including interfacial barrier height, thickness, and barrier asymmetry. Above the direct tunneling regime, electron transport in MTJs is governed by Pool Frenkel emission, which possibly arises due to the presence of high-density localized tail states below the conduction band of amorphous Si-Zn-Sn-O. Tunnelling magnetoresistance value of MTJs is found to be very low, which is attributed to the presence of various inelastic conduction channels. The results of this study might be useful to explore the potential of amorphous Si-Zn-Sn-O for fabricating low-resistive MTJ based spintronic devices. © 2023
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/88796)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.