Annealing and Doping Effects on Transition Metal Dichalcogenides-Based Devices: A Review

Abstract

Transition metal dichalcogenides (TMDC) have been considered promising electronic materials in recent years. Annealing and chemical doping are two core processes used in manufacturing electronic devices to modify properties and improve device performance, where annealing enhances crystal quality, reduces defects, and enhances carrier mobility, while chemical doping modifies conductivity and introduces new energy levels within the bandgap. In this study, we investigate the annealing effects of various types of dopants, time, and ambient conditions on the diverse material properties of TMDCs, including crystal structure quality, defect density, carrier mobility, electronic properties, and energy levels within the bandgap.