In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineeringopen access
- Authors
- Lee, J. W.; Eom, K.; Paudel, T. R.; Wang, B.; Lu, H.; Huyan, H. X.; Lindemann, S.; Ryu, S.; Lee, H.; Kim, T. H.; Yuan, Y.; Zorn, J. A.; Lei, S.; Gao, W. P.; Tybell, T.; Gopalan, V; Pan, X. Q.; Gruverman, A.; Chen, L. Q.; Tsymbal, E. Y.; Eom, C. B.
- Issue Date
- Nov-2021
- Publisher
- NATURE PORTFOLIO
- Citation
- NATURE COMMUNICATIONS, v.12, no.1
- Journal Title
- NATURE COMMUNICATIONS
- Volume
- 12
- Number
- 1
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89532
- DOI
- 10.1038/s41467-021-26660-7
- ISSN
- 2041-1723
2041-1723
- Abstract
- The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO3 thin films. Theoretical calculations predict the key role of the BaTiO3/PrScO3 (110)(O) substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ETC > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89532)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.