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Effect of Laser Fluence on Electrical Properties of (Sr0.75,La0.25)TiO3 Thin Films Grown by Pulsed-Laser-Deposition

Authors
Eom, KitaeKim, TaeminSeo, JiwonChoi, JaeduLee, Jaichan
Issue Date
Nov-2014
Publisher
AMER SCIENTIFIC PUBLISHERS
Keywords
Laser Fluence; Stoichiometric; Schottky Defect; Electron Killer
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.11, pp 8762 - 8765
Pages
4
Journal Title
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume
14
Number
11
Start Page
8762
End Page
8765
URI
https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89547
DOI
10.1166/jnn.2014.10012
ISSN
1533-4880
1533-4899
Abstract
We have grown Sr0.75La0.25TiO3 (SLTO) thin films using pulsed laser deposition (PLD) with various laser energy fluences. We investigated the effect of energy fluence on the compositions of SLTO films. The stoichiometry of SLTO films was controlled by adjusting the laser energy density. At low energy densities below 1.0 J/cm(2), SLTO films become non-stoichiometric with Ti deficiency. The Ti deficiency increases with decreasing the laser energy fluence. We have also investigated the effect of laser energy fluence on the electrical properties of the thin films. The electrical resistivity and carrier density intimately depend on the laser energy fluence as a result of the non-stoichiometry. After eliminating the effect of oxygen vacancies by post-annealing, the electrical properties are dependent on the cation stoichiometry in the oxide films.
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Eom, Kitae
반도체대학 (반도체·전자공학부)
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