Effect of Laser Fluence on Electrical Properties of (Sr0.75,La0.25)TiO3 Thin Films Grown by Pulsed-Laser-Deposition
- Authors
- Eom, Kitae; Kim, Taemin; Seo, Jiwon; Choi, Jaedu; Lee, Jaichan
- Issue Date
- Nov-2014
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Laser Fluence; Stoichiometric; Schottky Defect; Electron Killer
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.11, pp 8762 - 8765
- Pages
- 4
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 14
- Number
- 11
- Start Page
- 8762
- End Page
- 8765
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89547
- DOI
- 10.1166/jnn.2014.10012
- ISSN
- 1533-4880
1533-4899
- Abstract
- We have grown Sr0.75La0.25TiO3 (SLTO) thin films using pulsed laser deposition (PLD) with various laser energy fluences. We investigated the effect of energy fluence on the compositions of SLTO films. The stoichiometry of SLTO films was controlled by adjusting the laser energy density. At low energy densities below 1.0 J/cm(2), SLTO films become non-stoichiometric with Ti deficiency. The Ti deficiency increases with decreasing the laser energy fluence. We have also investigated the effect of laser energy fluence on the electrical properties of the thin films. The electrical resistivity and carrier density intimately depend on the laser energy fluence as a result of the non-stoichiometry. After eliminating the effect of oxygen vacancies by post-annealing, the electrical properties are dependent on the cation stoichiometry in the oxide films.
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