Analytical modeling of organic permeable-base transistors based on geometrical parametrization
- Authors
- Joshi, Saurabh Sureda; Lim, Kyung-Geun; Kim, Chang-Hyun
- Issue Date
- Nov-2023
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Organic transistors; Analytical modeling; Device physics; Permeable base; Equivalent circuit
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.83, no.9, pp 681 - 684
- Pages
- 4
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 83
- Number
- 9
- Start Page
- 681
- End Page
- 684
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/90063
- DOI
- 10.1007/s40042-023-00930-7
- ISSN
- 0374-4884
1976-8524
- Abstract
- Organic permeable-base transistors (OPBTs) are recently gaining increased attention due to their suitability for low-voltage flexible electronic circuits. However, the basic working mechanisms of these transistors are still not well understood because of the structural complexity of the devices. This aspect also implies a lack of physical and electrical model for robust interpretation and prediction of experimental results. This article proposes a new fully analytical description for current-voltage characteristics of vertical OPBTs, strategically employing simple yet universal geometrical parametrization scheme of a nanostructured base electrode. This functional model is also based on an equivalent-circuit approach that decouples field effect and bulk charge-transport properties of an OPBT. The proposed model is firmly validated by experimental data from a fullerene-based OPBT, which results in a set of materials and geometrical parameters. Furthermore, predictive capabilities of the model are demonstrated by focused parametric variations. Therefore, this model will serve as a practical tool for design, fabrication, and optimization of next-generation OPBTs.
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