355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors
DC Field | Value | Language |
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dc.contributor.author | Park, Sang Yeon | - |
dc.contributor.author | Choi, Younggon | - |
dc.contributor.author | Seo, Yong Hyeok | - |
dc.contributor.author | Kim, Hojun | - |
dc.contributor.author | Lee, Dong Hyun | - |
dc.contributor.author | Truong, Phuoc Loc | - |
dc.contributor.author | Jeon, Yongmin | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.contributor.author | Kwon, Sang Jik | - |
dc.contributor.author | Lee, Daeho | - |
dc.contributor.author | Cho, Eou-Sik | - |
dc.date.accessioned | 2024-02-18T01:30:23Z | - |
dc.date.available | 2024-02-18T01:30:23Z | - |
dc.date.issued | 2024-01 | - |
dc.identifier.issn | 2072-666X | - |
dc.identifier.issn | 2072-666X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/90470 | - |
dc.description.abstract | Bottom-gate thin-film transistors (TFTs) with n-type amorphous indium-gallium-zinc oxide (a-IGZO) active channels and indium-tin oxide (ITO) source/drain electrodes were fabricated. Then, an ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was scanned to locally anneal the active channel at various laser powers. After laser annealing, negative shifts in the threshold voltages and enhanced on-currents were observed at laser powers ranging from 54 to 120 mW. The energy band gap and work function of a-IGZO extracted from the transmittance and ultraviolet photoelectron spectroscopy (UPS) measurement data confirm that different energy band structures for the ITO electrode/a-IGZO channel were established depending on the laser annealing conditions. Based on these observations, the electron injection mechanism from ITO electrodes to a-IGZO channels was analyzed. The results show that the selective laser annealing process can improve the electrical performance of the a-IGZO TFTs without any thermal damage to the substrate. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | MDPI | - |
dc.title | 355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 001151312900001 | - |
dc.identifier.doi | 10.3390/mi15010103 | - |
dc.identifier.bibliographicCitation | MICROMACHINES, v.15, no.1 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.scopusid | 2-s2.0-85183154255 | - |
dc.citation.title | MICROMACHINES | - |
dc.citation.volume | 15 | - |
dc.citation.number | 1 | - |
dc.type.docType | Article | - |
dc.publisher.location | 스위스 | - |
dc.subject.keywordAuthor | UV pulsed laser annealing | - |
dc.subject.keywordAuthor | a-IGZO TFT | - |
dc.subject.keywordAuthor | ITO/IGZO energy band structure | - |
dc.subject.keywordAuthor | selective annealing | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Analytical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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