355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistorsopen access
- Authors
- Park, Sang Yeon; Choi, Younggon; Seo, Yong Hyeok; Kim, Hojun; Lee, Dong Hyun; Truong, Phuoc Loc; Jeon, Yongmin; Yoo, Hocheon; Kwon, Sang Jik; Lee, Daeho; Cho, Eou-Sik
- Issue Date
- Jan-2024
- Publisher
- MDPI
- Keywords
- UV pulsed laser annealing; a-IGZO TFT; ITO/IGZO energy band structure; selective annealing
- Citation
- MICROMACHINES, v.15, no.1
- Journal Title
- MICROMACHINES
- Volume
- 15
- Number
- 1
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/90470
- DOI
- 10.3390/mi15010103
- ISSN
- 2072-666X
2072-666X
- Abstract
- Bottom-gate thin-film transistors (TFTs) with n-type amorphous indium-gallium-zinc oxide (a-IGZO) active channels and indium-tin oxide (ITO) source/drain electrodes were fabricated. Then, an ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was scanned to locally anneal the active channel at various laser powers. After laser annealing, negative shifts in the threshold voltages and enhanced on-currents were observed at laser powers ranging from 54 to 120 mW. The energy band gap and work function of a-IGZO extracted from the transmittance and ultraviolet photoelectron spectroscopy (UPS) measurement data confirm that different energy band structures for the ITO electrode/a-IGZO channel were established depending on the laser annealing conditions. Based on these observations, the electron injection mechanism from ITO electrodes to a-IGZO channels was analyzed. The results show that the selective laser annealing process can improve the electrical performance of the a-IGZO TFTs without any thermal damage to the substrate.
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